نتایج جستجو برای: switching model
تعداد نتایج: 2162287 فیلتر نتایج به سال:
In the present paper we study a tri-trophic Lotka-Volterra food web model with omnivory and predator switching. We observe that if the intensity of predator switching increases the chaotic behavior of the omnivory model will be reduced. We conclude that the predator switching mechanism enhances the stability of an otherwise chaotic system.
A statistical model is developed to assess synchronization requirements for high-speed OTDM packet network regeneration. The model is then applied to analyze asynchronous and synchronous regenerator architectures.
abstract the present study was conducted to investigate the effect of using model essays on the development of writing proficiency of iranian pre-intermediate efl learners. to fulfill the purpose of the study, 55 pre- intermediate learners of parsa language institute were chosen by means of administering proficiency test. based on the results of the pretest, two matched groups, one as the expe...
In this paper, for the first time, the effect of the substrate doping of 22nm double-insulating UTBB silicon-on-insulator device on the switching performance and turn-on delay of the transistor is investigated. In UTBB devices, the substrate voltage is varied from positive to zero then negative voltages to trade-off transistor speed against the leakage current. Various circuit design procedures...
The Bolivian inflation process is analyzed utilizing a time-varying univariate and multivariate Markov-switching model (TMS). With monthly data and, beginning in the late 1930s, accurately described by TMS. intercept for high-inflation regime significantly higher than low-inflation actual rate mirrors smoothing probabilities of Markov process. Additionally, predicted duration each closely fits ...
SiC Schottky Barrier diodes (SiC-SBD) are known to oscillate/ring in the output terminal when used as free-wheeling diodes in voltage source converters. This ringing is due to RLC resonance between the diode capacitance, parasitic resistance and circuit stray inductance. In this paper, a model has been developed for calculating the switching energy of SiC diodes as a function of the switching r...
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