نتایج جستجو برای: tantalum compounds

تعداد نتایج: 229110  

Journal: :Journal of The Electrochemical Society of Japan 1966

2016
Deepak Sapkota Rupam Mukherjee David Mandrus

We have successfully synthesized niobium monophosphide and tantalum monophosphide crystals by a chemical vapor transport technique. We report resistivity vs. temperature of both materials in the temperature range from 2 K to 300 K. We have also performed electronic structure calculations and present the band structure and density of states of these two compounds. The calculations show that both...

Journal: :ChemSusChem 2013
Sining Yun Mingxing Wu Yudi Wang Jing Shi Xiao Lin Anders Hagfeldt Tingli Ma

Ta-based compounds show Pt-like behavior: Binary tantalum compounds as counter electrodes (CEs) in dye-sensitized solar cells (DSCs) demonstrate Pt-like electrocatalytic activity and competitive photovoltaic performance, matching the performance of DSCs with Pt CEs. The first-principle density functional theory (DFT) calculations provide a strategy for understanding the relationship between the...

2014
Marcel Kersting Rainer Pöttgen

The magnesium-rich intermetallic compounds RETMg2 (RE = La, Pr, Nd; T = Ni, Pd, Pt) were obtained by melting of the elements in sealed tantalum ampoules and subsequent annealing. Their structures have been characterized on the basis of powder X-ray diffraction. The RETMg2 phases crystallize with the orthorhombic MgCuAl2-type structure, space group Cmcm. The crystal chemical peculiarities are br...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه پیام نور - دانشگاه پیام نور استان خوزستان - دانشکده علوم پایه 1390

در این پایان نامه پارامترهای ساختاری ویژگی های الکترونی ترکیب tab2 ، در فاز هگزاگونال با گروه فضایی p6/mmm محاسبه و مورد بررسی قرار گرفته است. محاسبات با استفاده از روش امواج تخت با شبه پتانسیل فوق نرم در چارچوب نظریه ی تابعی چگالی اختلالی با نرم افزار کوانتوم اسپرسو انجام شده است. در این روش برای انرژی همبستگی-تبادلی از تفریب شیب تعمیم یافته gga (pbe) استفاده شده است. ثابت های شبکه استفاده شده...

2008
Wontae Noh

Recently, tantalum has been increasingly studied as a diffusion barrier material for copper due to its high melting point (2669 °C) and immiscibility with Cu. Most Ta thin films are deposited by PVD, but it would be advantageous to develop halide-free precursors to produce pure Ta films by CVD. To achieve this goal, we have studied the chemistry of new organotantalum compounds that consist only...

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