Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.05.010 ⇑ Corresponding author. Tel.: +90 312 2021247; fax E-mail address: [email protected] (S. Demir In order to explain the experimental effect of interface states (Nss) and series resistance (Rs) of device on the non-ideal electrical characteristics, current–voltage (I–V), capacitance–voltage (C–V) and conduc...

We have fabricated tungsten-diamond-like-nanocomposite (W-DLN) Schottky contacts on n-type and p-type 6H SiC (Si-face). The as-deposited n-type and ptype contacts are rectifying and measurement results suggest that the electrical characteristics are dominated by the properties of the tungsten SiC interface. The n-type contacts have a reverse leakage current density of 4.1 x 10 -3 Acm -2 and the...

let g=(v,e) be a simple graph. an edge labeling f:e to {0,1} induces a vertex labeling f^+:v to z_2 defined by $f^+(v)equiv sumlimits_{uvin e} f(uv)pmod{2}$ for each $v in v$, where z_2={0,1} is the additive group of order 2. for $iin{0,1}$, let e_f(i)=|f^{-1}(i)| and v_f(i)=|(f^+)^{-1}(i)|. a labeling f is called edge-friendly if $|e_f(1)-e_f(0)|le 1$. i_f(g)=v_f(1)-v_f(0) is called the edge-f...

The behaviour of the (I-V) characteristics is investigated in n+-i-n+ highly compensated Si resistors at temperatures 4.2-45K. The conduction mechanisms are discussed in detail here. The prebreakdown and breakdown regions of I-V characteristics were simulated by a one-dimensional model including the evidence of impurity high compensation and freeze out effects as well as the shallow-dopants imp...

In this note the notion of interval-valued fuzzy B-algebras (briefly,i-v fuzzy B-algebras), the level and strong level B-subalgebra is introduced.Then we state and prove some theorems which determine the relationshipbetween these notions and B-subalgebras. The images and inverse images ofi-v fuzzy B-subalgebras are defined, and how the homomorphic images andinverse images of i-v fuzzy B-subalge...

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