Analytical expressions for the gate-voltage dependence of the channel capacitance and the gate-to-contacts overlap capacitances in top-contact organic thin-film transistors (OTFTs) are derived and implemented in an organic compact capacitance model. The resulting modified model is verified by experimental data of transistors with constant mobility. The same model is analyzed by numerical simula...

Abstract— In this work, we present an analytical model for calculating the Read Margin of SRAM cells as a function of different transistors parameters. Using this model and assuming normal distribution for the threshold voltages of transistors in the presence of process variations, the probability distribution function (PDF) of the Read Margin is analytically derived. In addition, the time var...

We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified analytical expressions for the drain current. In addition to intrinsic FET behavior, the model includes contact resistance, traps and impurities, quantum capaci...

in this study, he’s variational approach (va) is used to solve the non-naturalvibrations and oscillations. the method works very well for the whole range of initial amplitudesand does not demand small perturbation. it is also sufficiently accurate to both linear and nonlinearphysics and engineering problems. we consider some examples to illustrate the effectiveness andconvenience of the method....