We study the metal-insulator transition in two sets of amorphous Si1−xNix films. The sets were prepared by different, electron-beam-evaporation-based technologies: evaporation of the alloy, and gradient deposition from separate Ni and Si crucibles. The characterization included electron and scanning tunneling microscopy, glow discharge optical emission spectroscopy, and Rutherford back scatteri...

We show that a newly developed high temperature, ultra-low rate oxidation process can produce homogeneous, fully strained, defect-free and perfectly flat Silicon Germanium (Si1-xGex) On Insulator films when x ? 0.33. For larger Ge concentrations (x = 0.5), we evidence new mechanism of elastic strain relaxation taking place through the undulation Si1-xGex layer without nucleation dislocations. I...

Alfalfa sprouts have been linked to numerous North American outbreaks of Salmonella in recent years. Conventionally, treatments involving chlorine, heat, and irradiation are used for alfalfa seed sanitation. However, such treatments may be highly variable in their efficacy for pathogen control and/or detrimental to sprout quality, therefore negatively perceived by consumers advocating for natur...

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a f...

The growth of epitaxy of silicon–carbon (Si1−yCy) alloy layers on (1 0 0) silicon substrates by chemical vapour deposition (CVD) with a novel precursor, neopentasilane, as the silicon source gas and methylsilane as the carbon source is reported. High quality Si1−yCy alloy layers at growth rates of 18 nm min−1 and 13 nm min−1 for fully substitutional carbon levels of 1.8% and 2.1%, respectively,...

Let $G$ be a connected graph, and let $D[G]$ denote the double graph of $G$. In this paper, we first derive closed-form formulas for different distance based topological indices for $D[G]$ in terms of that of $G$. Finally, as illustration examples, for several special kind of graphs, such as, the complete graph, the path, the cycle, etc., the explicit formulas for some distance based topologica...

I explore the promise organization research offers for improved management practice and how, at present, it falls short. Using evidence-based medicine as an exemplar, I identify ways of closing the prevailing “research-practice gap”—the failure of organizations and managers to base practices on best available evidence. I close with guidance for researchers, educators, and managers for translati...

We investigate thermal transport in Si/Ge and Si1−xGex /Si1−yGey alloy superlattices based on solving the single-mode phonon Boltzmann transport equation in the relaxation-time approximation and with full phonon dispersions. We derive an effective interface scattering rate that depends both on the interface roughness (captured by a wave-vector-dependent specularity parameter) and on the efficie...