نتایج جستجو برای: dibl effect
تعداد نتایج: 1641706 فیلتر نتایج به سال:
abstract this study is an attempt to determine the effect of nano- technology education on science lesson for fifth grade in primary school in the city of kermanshah. this research is experimental and is conducted in the from of pre-test and post- test for the control group. an achievement test was administered to determine the rate of learning in the students. the research is an applied one. ...
We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation. In gate stacking, we proposed tri-layer HfO2/TiO2/HfO2 as high-K dielectric and hafnium zirconium oxide (HZO) ferroelectric (FE) layer. The GAA-TFET overcomes thermionic limitation (60 mV/de...
type text or a website address or translate a document. abstract liquidity is considered the most important aspect of the development of stock markets. the main objective of this study was to evaluate the effect of the quality of financial information provided to replace its financial statements nmvdh and shrkt hayy that the liquidity of the shares on the tehran stock exchange is between the ...
the author intend to by studying the historical causes of the appearance of the novation in the west and explanation of its legal nature from past to present of french law, proves on the one hand that the novation does not extracted from the french civil code and in the shiite jurisprudence with quite similar terms even before the enactment of iranian civil code, was considered by the shiite su...
Sub/near-threshold static random-access memory (SRAM) design is crucial for addressing the bottleneck in power-constrained applications. However, high integration density and reliability under process variations demand an accurate estimation of extremely small failure probabilities. To capture such a “rare event” circuits, time storage overhead conventional simulations based on Monte Carlo (MC)...
In this paper we present current voltage and trans-conductance model for Dual Material Gate AlGaN/GaN HEMT. Our proposed model demonstrates complete charge control in 2DEG based channel of the device in order to investigate the current-voltage as well as transfer characteristics of the device under various gate and drain biases. The proposed device structure uses GaN material capable to withsta...
in this study, a simple, rapid and selective method was developed for the determination of dexamethasone. the proposed method is based on inhibitory effect of dexamethasone on the oxidation of orange-g by bromate in sulfuric acid media. the reaction was followed spectrophotometrically at 478.5 nm (?max). under optimum experimental conditions, (72.6 ?mol l-1 of orange-g, 0.76 mol l-1 of h2so4, 0...
This thesis studied the application of strained-Si technology to RF power LDMOSFETs. Key issues for its implementation were determined to be thermal budget restrictions, gate oxide formation and impact ionization effects. 2D simulations were carried out to explore the design space of the strained-Si LDMOSFET. In order to address the thermal budget restrictions, use of a high-tilt implant for th...
the extent to which written corrective feedback on linguistic errors can play a role in helping l2 writers improve the accuracy of their writing continues to be an issue of interest to researchers and teachers since truscott (1996) mounted a case for its abolition. while there is growing empirical evidence that written corrective feedback can successfully target some types of linguistic error (...
The paper illustrates the performance of Tri-Gate (TG) Dual Material (DM) SOI (Silicon on Insulator) Junctionless (JL) FET operating in Junction Accumulation Mode (JAM). An analytical model is developed to evaluate its performance. device also simulated using Silvaco simulator. Both and simulation results are compared found match closely. Quasi 3-D modeling approach adopted here determine surfa...
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