Monolithic microwave integrated circuits (MMIC’s) may be measured under relatively high-intensity lighting conditions. Later, when they are packaged, any anomalies found in subsequent measurements could be attributed to unwanted parasitics or box modes associated with the packaging. However, optical effects may not always be considered by radiofrequency (RF) and microwave engineers. For the fir...

Nowadays, there are many emerging electronic structures for which their nonlinear models for computeraided design are necessary, especially for the ones from the areas of nanoelectronics and microwave techniques. However, for such structures, sufficiently accurate analytic models are mostly unavailable. This is partially caused by the fact that the physical principles of the element operation a...

The recent success of smart-phones such as the iPhone and the transition from voice to mobile video, gaming and other data-hungry applications is driving unprecedented growth in wireless data traffic worldwide. A recent survey predicts that by 2014 there will be 5 billion personal devices connected to mobile networks generating 3.6 exabytes of data traffic per month, a 39-fold increase in four ...

A InGaP/InGaAs/GaAs dual channel pseudomorphic HEMT (DCPHEMT) with interesting triple doped sheets having gate length 800nm is modeled and simulated by using 2-dimensional simulation package ATLAS from Silvaco. Different DC and microwave performances of the above device are analyzed and investigated to judge the potential of the device for highperformance digital device applications. Due to the...

An empirical distributed model, based on electromagnetic analysis and standard S-parameter measurements up to microwave frequencies, is shown to be capable of accurate small-signal predictions up to the millimeter-wave range. The frequency-extrapolation approach takes advantage from a physicallyexpected, smooth behavior of suitably defined elementary active devices connected to a passive distri...

An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation. The model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent mobility, velocity saturation and parasitic resistances are included in the current voltage ch...