نتایج جستجو برای: tin compounds
تعداد نتایج: 242520 فیلتر نتایج به سال:
In this investigation, Ti/TiN nanolayer and TiN single layer coatings were coated on substrate of AISI 316L stainless steel by applying physical vapor deposition (PVD) using the type of cathodic arc evaporation (CAE). The evaluation of microstructure were carried out using x-ray diffraction (XRD), nanoindentation, atomic force microscopy (AFM) as well as scanning electron microscopy (SEM). Pola...
OBJECTIVE Gastrointestinal motility and functional motility disorders causing either delayed or accelerated gastric emptying (GE) may result in similar symptoms including nausea, vomiting, early satiety, fullness, bloating, and abdominal discomfort or pain. Hence, it is important to evaluate patients for both rapid and delayed GE in the same test. The gold standard technique to measure GE is sc...
in this thesis, we exploit a simple and suitable method for immobilization of copper(ii) complex of 4?-phenyl-terpyridine on activated multi-walled carbon nanotubes [amwcnts-o-cu(ii)-phtpy]. this nanostructure was characterized by various physico-chemical techniques. to ensure the efficiency and fidelity of copper species, the implementation of three-component strategies in click-chemistry all...
The present work reports an effect of surfacemodification of indium tin oxide (ITO) particles with chemicals on their electronic conductivity properties. Examined chemicals were polyvinyl alcohol (nonionic polymer), poly(diallyl dimethyl ammonium chloride) (cationic polymer), poly(sodium 4-styrene-sulfonate) (anionic polymer), (2-aminopropyl) trimethoxy silane (APMS) (silane coupling agent with...
چکیده ندارد.
12 لیگاند بازشیف از سالیسیل آلدیید و سالیسیل آلدییدهای استخلافی 3-، 4- و 5- متوکسی ، 5-کلرو و 5-برمو با دی آمین های 1 و 2-فنیلن، 1و3-پروپان و 1 و 2-اتیلن ساخته شد. کمپلکس های مسطح مربع نیکل ii این لیگاندها سنتز و شناسایی شدند. از محصولات افزایشی me2sncl2:[nin(l)])1:1 کمپلکس های فوق با دی متیل قلع دی کلراید ساخته شدند. کمپلکس me2snsalen سنتز و شناسایی گردید. کمپلکس سالن فلزات واسطه دو ظرفیتی منگ...
Related Articles The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a −250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 62 (2012) The Si3N4/TiN Interface: 1. TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 33 (2012) The Si3N4/TiN Interface: 5. TiN/Si3N4 Grown...
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