Electrically controlling the flow of charge carriers is the foundation of modern electronics. By accessing the extra spin degree of freedom (DOF) in electronics, spintronics allows for information processes such as magnetoresistive random-access memory. Recently, atomic membranes of transition metal dichalcogenides (TMDCs) were found to support unequal and distinguishable carrier distribution i...

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar c...

This study describes a new and simple approach to dope two-dimensional transition metal dichalcogenides (TMDCs) using the superatom Co6Se8(PEt3)6 as the electron dopant. Semiconducting TMDCs are wired into field-effect transistor devices and then immersed into a solution of these superatoms. The degree of doping is determined by the concentration of the superatoms in solution and by the length ...

In van der Waals heterostructures of 2D transition-metal dichalcogenides (2D TMDCs) electron and hole states are spatially localized in different layers forming long-lived interlayer excitons. Here, the influence additional or on electronic properties a MoS2/WSe2 heterobilayer (HBL), which is direct bandgap material, investigated from first principles. Additional modify hybridization, mostly af...

We study direct and indirect magnetoexcitons in Rydberg states monolayers heterostructures of transition metal dichalcogenices (TMDCs) an external magnetic field, applied perpendicular to the monolayer or framework a Mott-Wannier model excitons. calculate binding energies for $1s, 2s, 3s$, $4s$ by numerical integration Schr\"odinger equation using Rytova-Keldysh potential both Coulomb potential...