نتایج جستجو برای: dibl effect
تعداد نتایج: 1641706 فیلتر نتایج به سال:
The potential impact of high permittivity gate dielectrics on device short channel and circuit performance is studied over a wide range of dielectric permittivities ( gate) using two-dimensional (2-D) device and Monte Carlo simulations. The gate-to-channel capacitance and parasitic fringe capacitances are extracted using a highly accurate three-dimensional (3-D) capacitance extractor. It is obs...
Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm2 @ ...
In view of difficulties of the planar MOSFET technology to get the acceptable gate control over the channel FinFET technology based on multiple gate devices is better technology option for further shrinking the size of the planar MOSFET [1]. For double gate SOIMOSFET the gates control the channel created between source and drain terminal effectively. So the several short channel effects like DI...
in this research we have studied the effect of some transition-metals (cu, ag and au) substitutions on two-electron reduction potential of flavins by application of dft method. all geometries have been optimized at blyp level of theory and “6-31+g** + lanl2dz” mixed basis set. the frequency job at the same method and basis sets has been performed to obtain gibbs free energy of compounds. it h...
in this investigation the effect of external field on the electron density of nanostructures of cds, cdse, cdte, gaas and polymeric structure of three, four, five and six units of cds as a kind of nanosolar cells has been studied theoretically. as modeling this system in nanodimension, molecular structures has used. specific properties of molecular structures permit us to consider different sym...
the present study seeks to determine the effect of explicit instruction of metacognitive strategies on iranian high school students’ reading comprehension ability. it also attempts to investigate the relationship between the learners reading comprehension and metacognitive strategies. furthermore, the study investigates whether iranian efl female high school students are high, medium, or low me...
this thesis attempts to investigate the effects of prelistening activities on enhancing iranian efl learners` listening comprehension. the present study investigated ways in which learners` background knowledge could be activated in order to enhance their l2 listening comprehension by limiting the number of possible text interpretations prior to listening. the experiments conducted in this stud...
the present study was conducted to investigate the effect of implicit focus on form through input flooding and the effect of noticing, explicit focus on form on linguistic accuracy. to fulfill the purpose of the study, 86 iranian pre-intermediate efl learners of one of the language institutes were chosen by means of administering ket as the homogeneity test. these learners were pretested throug...
در این مقاله ساختار جدیدی از ترانزیستور دوگیتی به نام ترانزیستور dm-dg ارائه شده است. در این ساختار با به کار بردن عایق hfo2 در مرز ناحیه کانال و درین و همین طور استفاده از سیلیسیم-ژرمانیوم در ناحیه سورس منجر به بهبود ساختار در مقایسه با ساختارهای متداول دوگیتی (c-dg) شده است. ناحیه عایق hfo2 به طور قابل توجهی میدان الکتریکی را در ناحیه کانال و درین کاهش می دهد؛ بنابراین فرآیندهای مخرب در ساختا...
Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction cha...
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