نتایج جستجو برای: dibl effect

تعداد نتایج: 1641706  

2008
Nihar R. Mohapatra Madhav P. Desai

The potential impact of high permittivity gate dielectrics on device short channel and circuit performance is studied over a wide range of dielectric permittivities ( gate) using two-dimensional (2-D) device and Monte Carlo simulations. The gate-to-channel capacitance and parasitic fringe capacitances are extracted using a highly accurate three-dimensional (3-D) capacitance extractor. It is obs...

2016
Yuhua Xiong Xiaoqiang Chen Feng Wei Jun Du Hongbin Zhao Zhaoyun Tang Bo Tang Wenwu Wang Jiang Yan

Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm2 @ ...

2011
Sarman K Hadia Rohit R. Patel Yogesh P. Kosta

In view of difficulties of the planar MOSFET technology to get the acceptable gate control over the channel FinFET technology based on multiple gate devices is better technology option for further shrinking the size of the planar MOSFET [1]. For double gate SOIMOSFET the gates control the channel created between source and drain terminal effectively. So the several short channel effects like DI...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شیراز - دانشکده علوم 1391

in this research we have studied the effect of some transition-metals (cu, ag and au) substitutions on two-electron reduction potential of flavins by application of dft method. all geometries have been optimized at blyp level of theory and “6-31+g** + lanl2dz” mixed basis set. the frequency job at the same method and basis sets has been performed to obtain gibbs free energy of compounds. it h...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه یاسوج - دانشکده علوم 1391

in this investigation the effect of external field on the electron density of nanostructures of cds, cdse, cdte, gaas and polymeric structure of three, four, five and six units of cds as a kind of nanosolar cells has been studied theoretically. as modeling this system in nanodimension, molecular structures has used. specific properties of molecular structures permit us to consider different sym...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه سیستان و بلوچستان - دانشکده ادبیات و علوم انسانی 1392

the present study seeks to determine the effect of explicit instruction of metacognitive strategies on iranian high school students’ reading comprehension ability. it also attempts to investigate the relationship between the learners reading comprehension and metacognitive strategies. furthermore, the study investigates whether iranian efl female high school students are high, medium, or low me...

this thesis attempts to investigate the effects of prelistening activities on enhancing iranian efl learners` listening comprehension. the present study investigated ways in which learners` background knowledge could be activated in order to enhance their l2 listening comprehension by limiting the number of possible text interpretations prior to listening. the experiments conducted in this study examined the effect of prior knowledge and vocabulary teaching on iranian efl learners listening comprehension. the current study has two purposes: one is to investigate the effect of background knowledge on the second language listening comprehension of iranian intermediates and the other is to determine whether second language is facilitated by the introduction of unknown vocabularies in the form of prelistening activities. to conduct the study different instruments such as listening proficiency test and four listening tests such as pre and posttests were used and various statistical processes and techniques including paired-sample t-test, and analysis of variance (anova) were used. the findings of this study supported all three hypotheses tested. differences were found between the means of preteaching vocabulary variable, the background knowledge activation variable, and mean difference between these two strategies variable. subjects scored higher when the unknown words were taught in advance. likewise, subjects scored higher when they were asked some relevant questions about the topic than on those without them. there was, in addition, a significant difference between the means of preteaching vocabulary strategy and background knowledge activation strategy. in fact, preteaching vocabulary had a better effect in enhancing the students’ listening comprehension, in comparison to background knowledge activation strategy.

پایان نامه :دانشگاه آزاد اسلامی - دانشگاه آزاد اسلامی واحد تهران مرکزی - دانشکده زبانهای خارجی 1390

this thesis attempts to investigate the effects of prelistening activities on enhancing iranian efl learners` listening comprehension. the present study investigated ways in which learners` background knowledge could be activated in order to enhance their l2 listening comprehension by limiting the number of possible text interpretations prior to listening. the experiments conducted in this stud...

پایان نامه :دانشگاه آزاد اسلامی - دانشگاه آزاد اسلامی واحد گرمسار - دانشکده علوم انسانی 1391

the present study was conducted to investigate the effect of implicit focus on form through input flooding and the effect of noticing, explicit focus on form on linguistic accuracy. to fulfill the purpose of the study, 86 iranian pre-intermediate efl learners of one of the language institutes were chosen by means of administering ket as the homogeneity test. these learners were pretested throug...

ژورنال: :مهندسی برق دانشگاه تبریز 0
حامد نجفعلی زاده دانشگاه سمنان - دانشکده مهندسی برق و کامپیوتر علی اصغر اروجی دانشگاه سمنان - دانشکده مهندسی برق و کامپیوتر

در این مقاله ساختار جدیدی از ترانزیستور دوگیتی به نام ترانزیستور dm-dg ارائه شده است. در این ساختار با به کار بردن عایق hfo2 در مرز ناحیه کانال و درین و همین طور استفاده از سیلیسیم-ژرمانیوم در ناحیه سورس منجر به بهبود ساختار در مقایسه با ساختارهای متداول دوگیتی (c-dg) شده است. ناحیه عایق hfo2 به طور قابل توجهی میدان الکتریکی را در ناحیه کانال و درین کاهش می دهد؛ بنابراین فرآیندهای مخرب در ساختا...

2016
Youssouf Guerfi Guilhem Larrieu

Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction cha...

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