â â â  in this study, ability and skill of the nesting version of the regcm3 regional climate model in simulation of monthly and seasonal amount of precipitation and temperature using four different cumulus parameterization of grell-as, grell-fc, emanuel and kuo have been studied over khorasan area including three provinces of north khorasan, khorasan razavi and south khorasan. in this regards,...

The fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is the first model for circuit simulation based on a complete surface-potential description. HiSIM-SOI solves the surface potentials at all three SOI-surfaces perpendicular to the channel surface self-consistently. Besides verification against measured I-V characteristics, HiSIM-SOI is also verified with a 1/f noise analysis, ...

Financial support from ESRC grant number L116251013, Macroeconomic Modelling and Policy Analysis in a Changing Word is gratefully acknowledged. The usual disclaimer applies. Seasonal roots can help to explain the seasonal fluctuations in macroeconomic time series. In this paper we concentrate on monthly data and look at different versions of Robinson's (1994) tests for testing unit roots and ot...

The silicon-on-insulator (SOI) material system is today widely recognized as one of the most important platforms for the development of photonic components. This is mainly due to the fact that the mass fabrication techniques of the CMOS technology can be used for the fabrication of these SOI components. However, using silicon for photonic components has significant downsides. For example, it is...

Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BC-SOI) and floating-body (FB-SOI) for channel lengths ranging from 0.25 down to 0.1 m with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) ...