MOS devices go 3D, new quantum effect devices appear in the research labs. This paper discusses the impact of various innovative device architectures on circuit design. Examples of circuits with FinFETs or Multi-Gate-FETs are shown and their performance is compared with classically scaled CMOS circuits both for digital and analog applications. As an example for novel quantum effect devices beyo...

Scanning Hall Probe Microscopy (SHPM) is a scanning probe microscopy technique developed to observe and image magnetic fields locally. This method is based on application of the Hall Effect, supplied by a micro hall probe attached to the end of cantilever as a sensor.  SHPM provides direct quantitative information on the magnetic state of a material and can also image magnetic induction under a...

The fluctuations of the position of monatomic steps on Ag (111) are investigated by Scanning Tunneling Microscopy (STM). We analyze the influence of tip-sample interact~on by varying the gap ~mpedance over more than two orders of magnitude. For tunneling tips providing a weak tip-sample interact ion, we show that the step position au~ocorrelation function remains essentially unaltered. In this ...

Tunnel field-effect transistors were fabricated from axially doped silicon nanowire p-n junctions grown via the vapor-liquid-solid method. Following dry thermal oxidation to form a gate dielectric shell, the nanowires have a p-n-n(+) doping profile with an abrupt n-n(+) junction, which was revealed by scanning capacitance microscopy. The lightly doped n-segment can be inverted to p(+) by modula...

In the proposed work an analytical model of a p-channel dual material gate all around tunnel FET (DMGAA-TFET) is presented and its performance is compared with the conventional GAA-TFET. The electrostatic potential profile of the model is obtained using 2-D Laplace’s solution in the cylindrical coordinate system. A quantitative study of the drain current has been carried out using electric fiel...

We study the magnetic relaxation rate Γ of the single-molecule magnet Mn(12)-tBuAc as a function of the magnetic field component H(T) transverse to the molecule's easy axis. When the spin is near a magnetic quantum tunneling resonance, we find that Γ increases abruptly at certain values of H(T). These increases are observed just beyond values of H(T) at which a geometric-phase interference effe...

The electron field emission of tetrahedral amorphous carbon ~ta-C! films deposited by filtered cathodic vacuum arc is reported. The ta-C films were found to have a threshold field ranging from 18 to 28 V mm, depending on the sp content. The nitrogenated ta-C ~ta-C:N! films show a lower threshold field of 12 V mm as compared to the ta-C films. The threshold field appears to be dependent on the f...