La2Zr2O7 (LZO) films have been grown by metalorganic decomposition (MOD) to be used as buffer layers for coated conductors. LZO can crystallize into two similar structures: fluorite or pyrochlore. Coated conductor application focuses on pyrochlore structure because it is a good barrier against oxygen diffusion. Classical x-ray diffraction is not able to separate the contribution of these two st...

Successful application of sol-gel, metalorganic decomposition, or hydrothermal routes to ceramic thin films depends on the mechanical integrity of the precursor film. Above a critical thickness, a precursor film will crack or decohere from the substrate during drying. The cracking and thickness of thin metalorganic precursor films were simultaneously observed during drying using a standard opti...

We applied a new Migration Enhanced Metalorganic Chemical Vapor Deposition (MEMOCVD) epitaxial technique for growing AlN/GaN/InN epitaxial films and heterostructure layers on 2”, 3” and 4” substrates. The growth of the AlN/GaN/InN layers was carried out using controlled precursor pulsed flows to achieve accurate thickness control over large area substrates. This technique bridges the gap betwee...

Using a previously shown method, we prepared 2”-GaN wafers as templates for a self separation process. Self separation is happening during cooldown after growing thick layers of GaN in our hydride vapor phase epitaxy (HVPE) reactor. Our templates consist of GaN grown by metalorganic vapor phase epitaxy (MOVPE) directly on sapphire. These GaN layers are masked with 200nm of SiN that are structur...

Metalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO 3 thin films on (100) MgO substrates at 600'C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = CIIH190 2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectro...

AlzGa1−zAs layers of various compositions were grown using metalorganic chemical vapor deposition on a GaAs substrate with pattern alternating SiO2 mask/window stripes, each 100 µm wide. Microphotoluminescence maps and thickness profiles that demonstrated the distribution growth rate z in window experimentally studied. It was shown layer AlAs mole fraction increased continuously from center to ...

I Tsiaoussis, Volodymyr Khranovskyy, G P Dimitrakopulos, J Stoemenos, Rositsa Yakimova and B Pecz, Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates, 2011, JOURNAL OF APPLIED PHYSICS, (109), 4, 043507. http://dx.doi.org/10.1063/1.3549140 Copyright: American Institute of Physics http://www....

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