Cognitive radio and/or SDR (Software Defined Radio) inherently requires multi-band and multi standard wireless circuit. The circuit is implemented based on Si CMOS technology. In this article, the recent progress of Si RF CMOS is described and the reconfigurable RF CMOS circuit which was proposed by the authors is introduced. At the present and in the future, several kind of Si CMOS technology ...

Fabrication of an integrated circuit with smaller area, besides reducing the cost of manufacturing, usually causes a reduction in the power dissipation and propagation delay. Using the static CMOS technology to fabricate a circuit that realizes a specific logic function and occupies a minimum space, it must be implemented with continuous diffusion runs. Therefore, at the design stage, an Euleri...

Fabrication of an integrated circuit with smaller area, besides reducing the cost of manufacturing, usually causes a reduction in the power dissipation and propagation delay. Using the static CMOS technology to fabricate a circuit that realizes a specific logic function and occupies a minimum space, it must be implemented with continuous diffusion runs. Therefore, at the design stage, an Euleri...

For the 45nm technology node, high-k+metal gate transistors have been introduced for the first time in a high-volume manufacturing process [1]. The introduction of a high-k gate dielectric enabled a 0.7x reduction in Tox while reducing gate leakage 1000x for the PMOS and 25x for the NMOS transistors. Dual-band edge workfunction metal gates were introduced, eliminating polysilicon gate depletion...

In this paper a novel common mode separation technique for implementing fully differential current buffers is introduced.  Using the proposed method two high CMRR (Common Mode Rejection Ratio) and high PSRR (Power Supply Rejection Ratio) fully differential current buffers in BIPOLAR and CMOS technologies are implemented.   Simulation results by HSPICE using 0.18μm TSMC process for CMOS based st...