Zinc oxide (ZnO) is a widely used commercial material that is finding use in wound healing applications due to its antimicrobial properties. Our study demonstrates a novel approach for coating ZnO with precise thickness control onto 20 nm and 100 nm pore diameter anodized aluminum oxide using atomic layer deposition (ALD). ZnO was deposited throughout the nanoporous structure of the anodized al...

High-quality AlN layers with thickness up to 50 mm have been grown by HVTE at growth rates up to 60mm/h at deposition temperatures of 1000–11001C in the pressure range of 50–760Torr. The HVT process uses an aluminum chloride amine adduct as the aluminum source and ammonia for the nitrogen. This new technique eliminates the main difficulties of the conventional HVPE growth, where aluminum oxidat...

This report shows the analysis of two essential processes in the integrated circuit fabrication: SiO2 growth and metal deposition. The first part consists of the characterization of dry and wet thermal oxidation. The idea is to obtain the parameters that describe the behavior of this process and use this to predict specific oxidation times and thicknesses. The second part consists of metal depo...

The production of barrier packaging materials, e.g., for food, by physical vapor deposition (PVD) of inorganic coatings such as aluminum on polymer substrates is an established and well understood functionalization technique today. In order to achieve a sufficient barrier against gases, a coating thickness of approximately 40 nm aluminum is necessary. This review provides a holistic overview of...

This report shows the analysis of two essential processes in the integrated circuit fabrication: SiO2 growth and metal deposition. The first part consists of the characterization of dry and wet thermal oxidation. The idea is to obtain the parameters that describe the behavior of this process and use this to predict specific oxidation times and thicknesses. The second part consists of metal depo...

Diamond-like carbon deposition techniques, characterization techniques and processing parameters, such as gas ratio, bias voltage, gas pressure, type of precursor gas used, temperature, gas total flow, substrate material, among others are reviewed. Mostly silicon substrates have been employed, but also metallic materials such as titanium and aluminum alloys or steels have been used as well. Imp...

Aluminum oxide films were grown by reactive magnetron sputtering. In order to maintain a stable deposition process and high deposition rate, a pulsed direct current bias was applied to the aluminum target and the substrate. An external solenoid was used to form a magnetic trap between the target and the substrate. The influence of substrate temperature, substrate bias, and the magnetic trap on ...

Reactive ion etching of aluminum (Al) had been carried out with BCl3/Cl2, and process optimization was performed using statistical process modeling technique. I-optimal design was employed to set up the etch experiment with operating parameters, namely, gas composition, RF power, and chamber pressure. Analysis has been performed on etch rate, selectivity, and profile, individually, and the proc...