This paper presents a spatial-temporal single harmonic switching (STHS) transmitter array architecture with enhanced efficiency in the power back-off (PBO) region. STHS is an electromagnetic and circuit co-designed jointly optimized that realizes beamforming generation at same time. The temporal dimension originally added to achieve enhancement, which can be combined conventional enhancement me...

The p-process nucleosynthesis in He-accreting white dwarfs with sub-Chandrasekhar mass is revisited in the light of multi-dimensional hydrodynamical simulations. Post-processing calculations are performed on a sample of well-chosen track particles representative of the core and envelope material that is subject to the p-process. The p-abundance distributions in the disrupted core as well as in ...

An investigation of non-linear ballistic transport is being conducted, two device structures are investigated, a ballistic deflection transistor and a t-junction device. The transistor structure demonstrates a novel device that produces large small-signal gains in excess of 150. The t-junction structure was used to investigate the impact of ballistic transport versus upper valley transfer. A ba...

Abstract This study reports on the fabrication and characterization of thin-film transistors (TFTs) based indium–gallium–zinc–oxide (IGZO) with various source- drain-region metals (Pt, W Ti). The performance IGZO is compared to TFTs hydrogenated amorphous silicon (a-Si:H) Pt drain-regions. From output characteristics maximum saturation mobilities µ = 0.45 cm 2 /Vs for a-Si:H, 24 50 are extracte...

Surface and subsurface water collection in small seasonal rivers is very crucial, particularly in dry seasons. In this study a type of intake is introduced which acts as a river drainage network. An experimental model of the subsurface intake was constructed and the effective parameters such as upstream discharge, installation depth, and drain intervals were evaluated. The results showed that t...

Both pand n-channel poly-Si/Si1 Ge /Si sandwiched conductivity modulated thin-film transistors (CMTFTs) are demonstrated and experimentally characterized. The transistors use a poly-Si/Si1 Ge /Si sandwiched structure as the active layer to avoid the poor interface between the gate oxide and the poly-Si1 Ge material. Also an offset region placed between the channel and the drain is used to reduc...

Abstract In the nanoscale regime, the double-gate MOSFET can provide superior short-channel behavior. For this structure, device scaling issues are explored. Gate length scaling will be limited by the ability to control off-state leakage current due to quantum tunneling and thermionic emission between the source and drain as well as band-to-band tunneling between the body and drain. Lateral S/D...