نتایج جستجو برای: reference circuit
تعداد نتایج: 381493 فیلتر نتایج به سال:
Recent progress in the field of integrated optics in Japanis reviewed. The research effort on planar guides, active integratedoptics, and microoptics is outlined and pertinent references aregiven.
In this paper, measurement results for a micropower 2MHz CMOS frequency reference circuit fabricated with a ml2 13 M7 M5 M6 M8 :Ml8 M19 0.13 ,um CMOS process are presented. This frequency reference circuit, based on source-coupled CMOS multivibrator, provides M14 m 2 M22 the clock signal for a read-out circuit of a capacitive sensor. In Cm addition to a low power consumption, a good frequency s...
Abstract This paper proposes a high-precision, low-temperature coefficient, and repair-free bandgap reference power supply circuit. kind of source adopts the way double-loop feedback, namely through two amplifiers to clamp voltage improve performance The band gap is mainly composed four parts, including: core circuit, amplifier, start-up circuit Gaussian current compensation article analyzes wo...
This paper presents a new structure of a bandgap circuit which can be programmed to get any desired output voltage. Unlike conventional bandgap circuits, the proposed bandgap circuit uses MOS transistors operating in subthreshold region instead of bipolar transistors to generate PTAT and IPTAT currents. Use of the current conveyor makes the circuit capable of being operated at lower supply volt...
A pure CMOS threshold voltage reference (VTR) circuit achieves temperature(T) coefficient of 5 μV/°C (T=-60~+100 °C) and supply voltage(VDD) sensitivity of 0.1 mV/V (VDD=3~5 V). The combination of subthreshold current characteristics and different operating modes in n-MOSFETs provides a small voltage and temperature dependence. A feedback scheme from the reference output to gates of n-MOSFETs n...
This paper presents a simple Pico Watt reference circuit with the output voltage of 263.1mV using sub-threshold operation of MOSFETs at supply voltage of 0.7V. Proposed circuit consumes merely 400 pW of power at room temperature and it is designed using standard TSMC 0.18μm technology. Reference voltage is provided by subtracting the 0◦C threshold voltage of MOSFETs. The simulation results show...
This paper proposes a new self-biased op-amp’s startup circuit design and improved bandgap core circuit for all CMOS bandgap voltage reference (BGR). In a conventional BGR circuit, the startup circuit may be designed either be required an external power on reset signal (POR) or composed of several MOS transistors for generating bias current and the bandgap core circuits has two nodes that are c...
We developed a subthreshold CMOS circuit whose dynamical behavior, e.g., oscillatory or stationary behaviors, changes at a given threshold temperature with the aim of the development of low-power and compact temperature switch devices on monolithic ICs. The threshold temperature is set to a desired value by adjusting an external bias voltage. The circuit consists of two pMOS differential pairs,...
A high precision temperature compensated CMOS bandgap reference is presented. The proposed circuit employs current-mode architecture that improves the temperature stability of the output reference voltage as well as the power supply rejection when compared to the conventional voltage-mode bandgap referenc. Using only first order compensation the new architecture can generate an output reference...
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