We show that gallium-ion-implanted silicon serves as an etch mask for fabrication of high aspect ratio nanostructures by cryogenic plasma etching (deep reactive ion etching). The speed of focused ion beam (FIB) patterning is greatly enhanced by the fact that only a thin approx. 30 nm surface layer needs to be modified to create a mask for the etching step. Etch selectivity between gallium-doped...

A novel BDD nanograss array has been prepared simply on a heavily doped BDD film by reactive ion etching for use as an electrochemical sensor, which improved the reactive site, promoted the electrocatalytic activity, accelerated the electron transfer, and enhanced the selectivity.

Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silico...

There are many techniques available for two-dimensional machining and patterning of semiconductor surfaces for optoelectronic and microelectronic applications. These mainly use photolithography, electron beam or X-ray lithography or reactive ion etching. Smooth surfaces and high-aspect ratio sidewalls can be produced, but they are all limited to creating a single etch depth per processing stage...

High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are gener...

This paper describes the fabrication of large arrays (10(6) units in 1 cm(2)) of 100 µm tall, single-crystal silicon columns with submicron tip cross-sections. The columns are formed using thin film deposition and growth, reactive ion etching, and deep reactive ion etching. The columns can be either slightly tapered or have pencil-like morphology with nanoscaled tip diameter (41 nm). Conformal ...