«Modified Gaussian Quantum Dot»
۲۶ نتیجهLinear and nonlinear optical properties of a modified Gaussian quantum dot: pressure, temperature and impurity effect
In this paper, the effect of pressure, temperature and impurity on the energylevels, binding energy, linear and nonlinear optical properties of a modified Gaussianquantum dot are studied. In this regard, the finite element method is employed to solvethe single electron Schrodinge
Spectral scrambling in Coulomb - blockade quantum dots
We estimate the fluctuation width of an energy level as a function of the number of electrons added to a Coulomb-blockade quantum dot. A microscopic calculation in the limit of Koopmans’ theorem predicts that the standard deviation of these fluctuations is linear in the number of
THE LIQUID PHASE EPITAXY OF SELF–ASSEMBLED InAsSbP–BASED STRAIN INDUCED ISLANDS ON InAs SUBSTRATES AND THEIR EVOLUTION FROM PYRAMIDS TO QUANTUM DOTS
The Liquid Phase Epitaxy technique has been applied for the formation on InAs (100) substrates self-assembled InAsSbP-based strain induced islands. The evaluation of these objects from pyramids to globe and quantum dots (QD) was detected and investigated. The Scanning Electron Mi
Quantum forbidden-interval theorems for stochastic resonance
We extend the classical forbidden-interval theorems for a stochastic-resonance noise benefit in a nonlinear system to a quantum-optical communication model and a continuous-variable quantum key distribution model. Each quantum forbidden-interval theorem gives a necessary and suff
Temporal shaping of single photons by engineering exciton dynamics in a single quantum dot
The majority of photonic quantum information technologies rely on single photons that have high purity and indistinguishability. Although solid-state emitters can serve such demand, their asymmetric temporal spatial mode profiles limit the optimal efficiency fidelity interaction.
Atomistic Nanodevice Simulation
Friday July 8 2005 Editors: J.Bernardini, H.Dallaporta, Ch. Girardeaux 10 International Conference on the Formation of Semiconductor Interfaces (ICFSI-10) Aix-en-Provence, France, July 3-8, 2005 Friday 2 Fr.Plenary-8.30 I ATOMISTIC NANODEVICE SIMULATION Michel Lannoo L2MP UMR CNR
Large-Angle, Single-Order, One and Two-Dimensional Atomic Interferometry for Creation of Nanostructures
We have shown via explicit analysis as well as numerical simulation the design of two large angle interferometers employing two-photon pulses. The first one uses the technique of adiabatic following in a dark state to produce a large splitting angle atomic interferometer that is
Correlations in Chaotic Eigenfunctions at Large Separation
An energy eigenfunction in a classically chaotic system is known to have spatial correlations which (in the limit of small h̄) are governed by a microcanonical distribution in the classical phase space. This result is valid, however, only over coordinate distances which are small
Influence of Semiconductor Nanocrystal Concentration on Polymer Hole Transport in Hybrid Nanocomposites
This article investigates hole transport in poly[2-methoxy-5-(2'-ethyl-hexyloxy)1,4-phenylene vinylene] (MEH-PPV)/CdSe colloidal quantum dot (CQD) nanocomposites using a modified time-of-flight photoconductivity technique. The measured hole drift mobilities are analyzed in the co
Emission wavelength tuning of fluorescence by fine structural control of optical metamaterials with Fano resonance
We demonstrated fine emission wavelength tuning of quantum dot (QD) fluorescence by fine structural control of optical metamaterials with Fano resonance. An asymmetric-double-bar (ADB), which was composed of only two bars with slightly different bar lengths, was used to obtain Fa