نتایج جستجو برای: effect transistor (HJFET)

تعداد نتایج: 1654265  

Journal: :Coatings 2022

Herein, we report the fabrication of a novel heterojunction field-effect transistor (HJFET) based on two-dimensional graphene (Gr), molybdenum diselenide (MoSe2), and black phosphorus (BP) that is shielded using hexagonal boron nitride to prevent device degradation. We perform electrical optoelectronic characterizations Gr/n-MoSe2 Gr/n-MoSe2/p-BP heterojunctions. Heterojunction n-MoSe2/p-BP exh...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تربیت مدرس 1389

growing demands and requires of high data rate systems cause significant increase of high frequency systems for wideband communication applications. as mixers are one of the main blocks of each receivers and its performance has great impact on receiver’s performance; in this thesis, a new solution for ku-band (12-18 ghz) mixer design in tsmc 0.18 µm is presented. this mixer has high linearity a...

Journal: :journal of advances in computer research 0
meysam mohammadi department of computer engineering, ayatollah amoli branch, islamic azad university, amol, iran yavar safaei mehrabani independent researcher

full adder cell is often placed in the critical path of other circuits. therefore it plays an important role in determining the entire performance of digital system. moreover, portable electronic systems rely on battery and low-power design is another concern. in conclusion it is a vital task to design high-performance and low-power full adder cells. since delay opposes against power consumptio...

Journal: :Journal of Applied Physics 1989

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...

In this paper, for the first time, the effect of the substrate doping of 22nm double-insulating UTBB silicon-on-insulator device on the switching performance and turn-on delay of the transistor is investigated. In UTBB devices, the substrate voltage is varied from positive to zero then negative voltages to trade-off transistor speed against the leakage current. Various circuit design procedures...

Journal: :Electrochemical science advances 2022

Abstract Field‐effect transistors have strong applications in biosensing field from pH and glucose monitoring to genomics, proteomics, cell signaling assays, biomedical diagnostics general. Notable advantages are the high sensitivity (thanks intrinsic amplification), quick response (useful for real‐time monitoring), suitability miniaturization, compact portable read‐out systems. The initial con...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شیراز - دانشکده علوم پایه 1392

a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...

Journal: :international journal of nano dimension 0
r. abband pashaki department of electrical engineering, guilan science and research branch, islamic azad university, guilan, iran. s. a. sedigh ziabari department of electrical engineering, roudbar branch, islamic azad university, roudbar, iran.

in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...

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