The Effect of Substrate on Structural and Electrical Properties of Cu3N Thin Film by DC Reactive Magnetron Sputtering

نویسندگان

  • Farhang Sohillian Department of physics, faculty of science, kharazmi university, tehran, Iran
  • Vahdat Rafee Department of physics, faculty of science, payame noor university, tehran, Iran
چکیده مقاله:

The aim of this paper is to study the effect of substrate on the Cu3N thin films. At first Cu3N thin films are prepared using DC magnetron sputtering system. Then structural properties, surface roughness, and electrical resistance are studied using X-ray diffraction (XRD), the atomic force microscope (AFM) and four-point probe techniques respectively. Finally, the results are investigated and compared for glass and Si substrate. The results show a phase transition in orientation from (111) and (100) planes to (200) plane when the substrate of the sample is changed from glass to Si. Also, the grain size of deposited particles on films increased, changing substrate from glass to Si. Then, AFM results show that surface roughness on Si substrate is more than the glass substrate. Finally, four-point probe techniques show that surface electrical resistivity is increased sharply, changing substrate from silicon to glass.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Morphology of Thin Aluminum Film Grown by DC Magnetron Sputtering onto SiO2 on Si(100) Substrate

The morphology and grown mechanism of aluminum films from 3nm to 30nm in thickness onto thermal SiO2 on Si(100) substrates have been studied by atomic force microscopy and TCR measurement. The thin films prepared by dc magnetron sputtering at 450°C is composed of islands of aluminum. The island density, distribution of island size, height, and shape are studied.

متن کامل

Effect of Thickness on Properties of Copper Thin Films Growth on Glass by DC Planar Magnetron Sputtering

Copper thin films with nano-scale structure have numerous applications in modern technology.  In this work, Cu thin films with different thicknesses from 50–220 nm have been deposited on glass substrate by DC magnetron sputtering technique at room temperature in pure Ar gas. The sputtering time was considered in 4, 8, 12 and 16 min, respectively. The thickness effect on the structural, mo...

متن کامل

AlNXOY THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resis...

متن کامل

The effect of sputtering RF power on structural, optical and electrical properties of CuO and CuO2 thin films

In this paper, the RF power change effect on the structural, optical and electrical properties of CuO thin films prepared by RF reactive magnetron sputtering deposited on glass substrates are studied. At first, the thin films are prepared at 150, 280, 310 and 340W respectively. Then, the films are characterized by XRD, AFM, Uv-visible and four-point probe analysis respectively. The results show...

متن کامل

Growth, structural, and magnetic properties of iron nitride thin films deposited by dc magnetron sputtering

FeN thin films were deposited on glass substrates by dc magnetron sputtering at different Ar/N2 discharges. The composition, structure and the surface morphology of the films were characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and atomic force microscopy (AFM). Films deposited at different nitrogen pressures exhibited different structures with different nit...

متن کامل

Optimization of DC reactive magnetron sputtering deposition process for efficient YSZ electrolyte thin film SOFC

Yttria-stabilized zirconia (YSZ, ZrO2:Y2O3) thin films were deposited by reactive DC magnetron sputtering with a high deposition rate from a metallic target of Zr/Y in an argon/oxygen atmosphere. Plasma parameters and composition analysis of the gas phase reveal that the sputtering process in the “compound” mode is reached for a 2.5 sccm oxygen flow rate. Deposition onto silicon in “metal” mode...

متن کامل

منابع من

با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ذخیره در منابع من قبلا به منابع من ذحیره شده

{@ msg_add @}


عنوان ژورنال

دوره 5  شماره 3

صفحات  497- 504

تاریخ انتشار 2017-09-01

با دنبال کردن یک ژورنال هنگامی که شماره جدید این ژورنال منتشر می شود به شما از طریق ایمیل اطلاع داده می شود.

میزبانی شده توسط پلتفرم ابری doprax.com

copyright © 2015-2023