determination of uranium in natural water and complex solutions using ion exchange chromatography: a combined procedure using ion exchange chromatography and uv-vis spectrophotometry techniques has been developed to measure uranum in natural water and complex solutions. after conditicing , one hundred milli liters of sample solutions have been passed through an ion exchange column,pachked with ...

fluorescence chemical sensors for the highly sensitive and selective determination of pb2+ , hg2+, co2+ and fe3+ ions in aqueous solutions are described. the ion sensing system was prepared by incorporating lipophilic ligand (l) as a neutral ion-selective fluoroionophore in the plasticized pvc membrane containing sodium tetraphenylborate or potasium tetrakis (p-chlorophenyl) borate as a liphoph...

abstract ion selective electrodes (ises) are electrochemical sensors that respond selectivity to the activity of ionic species. an ion-selective electrode is an electrochemical device that uses a thin selective membrane or film as the recognition element, and is an electrochemical half-cell equivalent to other half-cells of the zeroth (inert metal in a redox electrolyte). in common methods o...

in this thesis, a better reaction conditions for the synthesis of spirobarbiturates catalyzed by task-specific ionic liquid (2-hydroxy-n-(2-hydroxyethyl)-n,n-dimethylethanaminium formate), calcium hypochlorite ca(ocl)2 or n-bromosuccinimide (nbs) in the presence of water at room temperature by ultrasonic technique is provided. the design and synthesis of spirocycles is a challenging task becaus...

abstract venlafaxine, 1–[2–(dimethylamino)–1–(4–methoxyphenyl) ethyl]cyclohexanol hydrochloride is a novel non-tricyclic antidepressant. venlafaxine is a second generation antidepressant drug, has a neuropharmacologic profile distinct from that of existing antidepressants including tricyclic compounds, selective serotonin reuptake inhibitors and monoamine oxidase inhibitors. venlafaxine impart...

چکیده با کاهش ابعاد ترانزیستورهای ماسفت و نزدیک شدن به حد نانومتری، شیب زیر آستانه ترانزیستورها زیاد می¬شود. بالا بودن شیب زیر آستانه در این ترانزیستورها و داشتن نسبت ion/ioff پایین، کاربرد آنها را در مدارهای دیجیتال و آنالوگ دچار چالش می¬کند. برای کاهش شیب زیر آستانه و همچنین افزایش نسبت ion/ioff، ساختارهای تازه ای معرفی شده است که ترانزیستورهای اثر میدانی تونل زنی یکی از آنها است. این تران...